3CG3906

PNP PNP EPITAXIAL SILICON TRANSISTOR R 3CG3906 MAIN CHARACTERISTICS Package IC VCEO PC (TO-92) PC (SOT-23) -0.2A -40V 0.625W 0.350W APPLICATIONS z z High frequency switching power supply z z High frequency power transform z z Commonly power amplifier circuit SOT-23 TO-92 z z z 3DG3904 z（RoHS） FEATURES z Epitaxial silicon z High switching speed z Complementary to 3DG3904 z RoHS product ORDER MESSAGE Order codes Marking 3CG3906-O-T-N-C 3CG3906-O-T-N-A 3CG3906-O-N1-N-A 3906 3906 J Halogen Free NO NO NO Package TO-92 TO-92 SOT-23 Packaging Bag Brede Brede ：201510B 1/6 R ABSOLUTE RATINGS (Tc=25℃) — — — Parameter Collector- Base Voltage（ IE=0） Collector- Emitter Voltage（IB=0） Emitter-Base Voltage（IC=0） Collector Current（DC） Total Dissipation (TO-92) Total Dissipation (SOT-23) Junction Temperature Storage Temperature 3CG3906 Symbol VCBO VCEO VEBO IC PC PC Tj Tstg Value -40 -40 -5 -0.2 0.625 0.350 150 -55~+150 Unit V V V A W W ℃ ℃ ElECTRICAL CHARACTERISTIC Parameter Tests conditions Value(min) Value(typ) Value(max) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO IC=-10uA,IE=0 IC=-1mA,IB=0 IE=-10uA,IC=0 VCB=-30V, IE=0 VEB=-3V, IC=0 VCE =-1V, IC=-0.1mA -40 - - -40 - - -5 - - - - -50 - - -50 60 hFE VCE =-1V, VCE =-1V, VCE =-1V, IC=-1mA IC=-10mA IC=-50mA 80 100 200 300 60 VCE(sat) VCE =-1V, IC=-100mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA 30 --- -0.25 0.4 VBE(sat) fT IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VC...