3CG5401

PNP PNP EPITAXIAL SILICON TRANSISTOR R 3CG5401 MAIN CHARACTERISTICS Package IC VCEO PC (TO-92) PC (SOT-23) -0.6A -150V 0.625W 0.350W APPLICATIONS z z High frequency switching power supply z z High frequency power transform z z Commonly power amplifier circuit SOT-23 TO-92 z z z 3DG5551 z（RoHS） FEATURES z Epitaxial silicon z High switching speed z Complementary to 3DG5551 z RoHS product ORDER MESSAGE Order codes Marking 3CG5401-O-T-N-C 3CG5401-O-T-N-A 3CG5401-O-N1-N-A 5401 5401 H Halogen Free NO NO NO Package TO-92 TO-92 SOT-23 Packaging Bag Brede Brede ：201509A 1/6 R ABSOLUTE RATINGS (Tc=25℃) — — — Parameter Collector- Base Voltage（ IE=0） Collector- Emitter Voltage（IB=0） Emitter-Base Voltage（IC=0） Collector Current（DC） Total Dissipation (TO-92) Total Dissipation (SOT-23) Junction Temperature Storage Temperature 3CG5401 Symbol VCBO VCEO VEBO IC PC PC Tj Tstg Value -160 -150 -5 -0.6 0.625 0.350 150 -55~+150 Unit V V V A W W ℃ ℃ ElECTRICAL CHARACTERISTIC Parameter Tests conditions Value(min) Value(typ) Value(max) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) IC=-100uA,IE=0 IC=-1mA,IB=0 IE=-10uA,IC=0 VCB=-120V, IE=0 VEB=-3V, IC=0 VCE =-5V, IC=-10mA VCE =-5V, IC=-1mA VCE =-5V, IC=-50mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA -160 -150 -5 60 50 50 - 150 - -50 -50 240 -0.2 0.5 -1.0 -1.0 fT VCE=-10V, IC=-10mA 100 - - Unit V V V nA nA V V MHz THERMAL C...