3CG8550

PNP PNP EPITAXIAL SILICON TRANSISTOR R 3CG8550 MAIN CHARACTERISTICS Package IC VCEO PC -1.5A -25V 1W APPLICATIONS z z High frequency switching power supply z z High frequency power transform z z Commonly power amplifier circuit z z z 3DG8050 z（RoHS） FEATURES z Epitaxial silicon z High switching speed z Complementary to 3DG8050 z RoHS product TO-92 ORDER MESSAGE Order codes Marking 3CG8550-O-T-N-C 3CG8550-O-T-N-A 8550 8550 Halogen Free NO NO Package TO-92 TO-92 Packaging Bag Brede ：201501A 1/5 R ABSOLUTE RATINGS (Tc=25℃) — — — Parameter Collector- Base Voltage（ IE=0） Collector- Emitter Voltage（IB=0） Emitter-Base Voltage（IC=0） Collector Current（DC） Total Dissipation (TO-92) Junction Temperature Storage Temperature 3CG8550 Symbol VCBO VCEO VEBO IC PC Tj Tstg Value -40 -25 -6 -1.5 1 150 -55~+150 Unit V V V A W ℃ ℃ ElECTRICAL CHARACTERISTIC Parameter Tests conditions Value(min) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO IC=-100uA,IE=0 IC=-2mA,IB=0 IE=-100uA,IC=0 VCB=-35V, IE=0 VEB=-6V, IC=0 -40 -25 -6 - Hfe(1) Hfe(2) Hfe(3) VCE =-1V, VCE =-1V, VCE =-1V, IC=-5mA IC=-100mA IC=-800mA 100 150 80 VCE(sat) VBE(sat) fT IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA VCE=-10V, IC=-50mA 100 Value(typ) Value(max) -- -- -- - -100 - -100 -- 250 350 -- -0.28 -0.5 -0.98 -1.2 200 - Unit V V V nA nA V V MHz THERMAL CHARACTERISTIC Parameter TO-92 Thermal Resistance Junction Ambient TO-92 Symbol Value(...