3CG9012

PNP PNP EPITAXIAL SILICON TRANSISTOR R 3CG9012 MAIN CHARACTERISTICS Package IC VCEO PC -500mA -20V 625mW APPLICATIONS z z High frequency switching power supply z z High frequency power transform z z Commonly power amplifier circuit z z z 3DG9013 z（RoHS） FEATURES z Epitaxial silicon z High switching speed z Complementary to 3DG9013 z RoHS product TO-92 ORDER MESSAGE Order codes Marking 3CG9012-O-T-N-C 3CG9012-O-T-N-A 9012 9012 Halogen Free NO NO Package TO-92 TO-92 Packaging Bag Brede ：201504A 1/5 R 3CG9012 ABSOLUTE RATINGS (Tc=25℃) Parameter — — — Collector- Base Voltage（ IE=0） Collector- Emitter Voltage（IB=0） Emitter-Base Voltage（IC=0） Collector Current（DC） Total Dissipation (TO-92) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Value -40 -20 -5 -500 625 150 -55~+150 Unit V V V mA mW ℃ ℃ ElECTRICAL CHARACTERISTIC Parameter Tests conditions Value(min) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO IC=-100uA,IE=0 IC=-1mA,IB=0 IE=-100uA,IC=0 VCB=-25V, IE=0 VEB=-3V, IC=0 -40 -20 -5 - hFE VCE(sat) VCE =-1V, IC=-50mA VCE =-1V, IC=-500mA IC=-500mA, IB=-50mA 80 40 - VBE(sat) fT IC=-500mA, IB=-50mA VCE=-5V, IC=-10mA 100 Value(typ) Value(max) ---- -50 - -50 170 270 -0.4 -0.6 -1.0 -1.2 -- Unit V V V nA nA V V MHz THERMAL CHARACTERISTIC Parameter TO-92 Thermal Resistance Junction Ambient TO-92 Symbol Value(min) Value(max) Unit Rth(j-a) - 200 ℃/W ：201504A 2/5 ...