3CG9015

PNP PNP EPITAXIAL SILICON TRANSISTOR R 3CG9015 MAIN CHARACTERISTICS Package IC VCEO PC -100mA -45V 450mW APPLICATIONS z z High frequency switching power supply z z High frequency power transform z z Commonly power amplifier circuit z z z 3DG9014 z（RoHS） FEATURES z Epitaxial silicon z High switching speed z Complementary to 3DG9014 z RoHS product TO-92 ORDER MESSAGE Order codes Marking 3CG9015-O-T-N-C 3CG9015-O-T-N-A 9015 9015 Halogen Free NO NO Package TO-92 TO-92 Packaging Bag Brede ：201501A 1/5 R 3CG9015 ABSOLUTE RATINGS (Tc=25℃) Parameter — — — Collector- Base Voltage（ IE=0） Collector- Emitter Voltage（IB=0） Emitter-Base Voltage（IC=0） Collector Current（DC） Total Dissipation (TO-92) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Value -50 -45 -5 -100 450 150 -55~+150 Unit V V V mA mW ℃ ℃ ElECTRICAL CHARACTERISTIC Parameter Tests conditions Value(min) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO IC=-100uA,IE=0 IC=-1mA,IB=0 IE=-100uA,IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 -50 -45 -5 - hFE VCE(sat) VBE(sat) VCE =-5V, IC=-1mA IC=-100mA, IB=-5mA IC=-100mA, IB=-5mA 250 - fT VCE=-5V, IC=-10mA 100 Value(typ) Value(max) -- -- -- - -50 - -50 350 450 -0.2 -0.7 -0.82 -1.0 190 - Unit V V V nA nA V V MHz THERMAL CHARACTERISTIC Parameter TO-92 Thermal Resistance Junction Ambient TO-92 Symbol Value(min) Value(max) Unit Rth(j-a) - 278 ℃/W ：201501A 2/5 VCEsa...