3CT08B

R Sensitive Gate SCRs 3CT08B MAIN CHARACTERISTICS Package IT(AV) VDRM/VRRM IGT 0.8 A 800 V 10-100 μA   APPLICATIONS  Half AC switching  Phase control Pin 1 2 3 Description K G A TO-92  ，   RoHS FEATURES  Glass-passivated mesa chip for reliability and uniform  Low on-state voltage and High ITSM  RoHS products ORDER MESSAGE Order codes 3CT08B -O-T-N-C 3CT08B -O-T-B-A Marking 3CT08B 3CT08B Halogen Free NO NO Package TO-92 TO-92 Packaging Bag Brede ：201510C 1/5 R ABSOLUTE RATINGS (Tc=25℃) 3CT08B Parameter Symbol Value Unit Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current On-state RMS current ( half sine wave) Non- repetitive surge peak on-state current ( half sine wave ,t=10ms) VDRM VRRM IT（AV） IT(RMS) ITSM 800 800 0.8 1.2 12 V V A A A I2t for fusing ( t=10ms) I2t 0.72 A2s Peak gate current IGM 1 Peak gate voltage VGM 5 Peak reverses gate voltage VRGM 5 Peak gate power PGM 2 Average gate power( over any 20ms period) PG(AV) 0.1 Storage temperature Tstg -40~150 Operation junction temperature TJ 125 ELECTRICAL CHARACTERISTIC (TC=25℃ unless otherwise stated) A V V W W ℃ ℃ Parameter Symbol Tests conditions min typ max Unit Peak Repetitive Blocking Current IDRM VDM=VDRM, Tj=125℃, RGK=1KΩ - - 0.1 Peak Repetitive Reverse Current IRRM VRM=VRRM, Tj=125℃, RGK=1KΩ - - 0.1 Peak on-state voltage VTM I...