3CT12B

R Thyristors(SCR) 3CT12B MAIN CHARACTERISTICS Package IT(AV) VDRM/VRRM IGT 13A 800V 1-25mA   APPLICATIONS  Half AC switching  Phase control Pin 1 2 3 Description K A G TO-220C  ，   RoHS FEATURES  Glass-passivated mesa chip for reliability and uniform  Low on-state voltage and High ITSM  RoHS products TO-263 ORDER MESSAGE Order codes 3CT12B-O-C-N-C 3CT12B-O-C-N-B 3CT12B-O-S-B-B Marking 3CT12B 3CT12B 3CT12B Halogen Free Package TO-220C TO-220C TO-263 Packaging Bag Tube Tube ：201510F 1/5 R 3CT12B ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current ( half sine wave) On-state RMS current ( all conduction angles ) Non- repetitive surge peak on-state current ( half sine wave ,t=10ms) I2t for fusing ( t=10ms) Peak gate current Peak gate voltage Peak reverses gate voltage Peak gate power Average gate power ( over any 20ms period ) Storage temperature Operation junction temperature Symbol VDRM VRRM IT（AV） IT(RMS) ITSM I2t IGM VGM VRGM PGM PG(AV) Tstg TVJ Value 800 800 13 20 Unit V V A A 200 200 5 5 5 20 0.5 -40~150 125 A A2s A V V W W ℃ ℃ STATIC CHARACTERISTICS (TC=25℃ unless otherwise stated) Parameter Symbol Tests conditions min typ max Peak Repetitive Blocking Current IDRM VDM= VDRM(MAX), Tj=125℃ - - 1.0 Peak Repetitive Reverse Current IRRM VRM= VRRM(MAX), Tj=125℃ - - 1.0 Peak on-s...