3CT1S

R TRIACS 3CT1S MAIN CHARACTERISTICS Package IT(RMS) VDRM IGT 0.8A 600V 5mA APPLICATIONS Pin 1 2 3 Description 1 MT1 G 2 MT2 z z z AC switching z Phase control TO-92 FEATURES z ， z Glass-passivated mesa chip for reliability and uniform z z RoHS z Low on-state voltage and High ITSM z RoHS products ORDER MESSAGES Order code 3CT1S-O-T-N-C Marking 3CT1S Package TO-92 Packaging Bag ABSOLUTE RATINGS (TC=25℃) Parameter Repetitive peak off-state voltage Symbol VDRM Condition Value Unit ±600 V On-state RMS current Nonrepetitive surge peak on-state current IT(RMS) ITSM full sine wave full sine wave ,t=20ms full sine wave ,t=16.7ms 0.8 A 8A 9A I2t t=10ms Repetitive rate of rise of on-state current after triggering dI/dt 0.45 A2s 20 A/μs Peak gate current Average gate power Storage temperature Operation junction temperature IGM PG(AV) Tstg TVJ over any 20ms period 1A 0.1 W -40~150 ℃ 110 ℃ ：201510G 1/5 R 3CT1S ELECTRICAL CHARACTERISTIC (TC=25℃) Parameter Symbol Condition Peak Repetitive Blocking IDRM VDM=VDRM, Tj=110℃, Current gate open Peak on-state voltage VTM ITM=2A Min Typ Max Unit - - 0.1 mA - 1.5 1.8 V Gate trigger current MT1(-),MT2(+),G(+) VDM=12V, MT1(-),MT2(+),G(-) IGT RL=100Ω MT1(+),MT2(-),G(-) MT1(+),MT2(-),G(+) - - 5 mA - 5 mA - 5 mA - 7 mA MT1(-),MT2(+),G(+) - - 1.1 V Gate trigger voltage VDM=12V, MT1(-),MT2(+),G(-) VGT RL=100Ω MT1(+),MT...