3CT4A

R Sensitive Gate SCRs 3CT4A MAIN CHARACTERISTICS Package IT(AV) VDRM/VRRM IGT 2.5 A 500 V 10-140 μA   APPLICATIONS  Half AC switching  Phase control Pin 1 2 3 Description K A G  ，   RoHS FEATURES  Glass-passivated mesa chip for reliability and uniform  Low on-state voltage and High ITSM  RoHS products TO-126 TO-220 ORDER MESSAGE Order codes 3CT4A -O-Z-N-C 3CT4A-O-M-N-C Marking 3CT4A 3CT4A Halogen Free NO NO Package TO-220 TO-126 Packaging Bag Bag ：201510D 1/5 R 3CT4A ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol Value Unit Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current On-state RMS current ( half sine wave) Non- repetitive surge peak on-state current ( half sine wave ,t=10ms) VDRM VRRM IT（AV） IT(RMS) ITSM 500 500 2.5 4.0 30 V V A A A I2t for fusing ( t=10ms) I2t 4.5 A2s Peak gate current IGM 1 Peak gate voltage VGM 5 Peak reverses gate voltage VRGM 5 Average gate power( over any 20ms period) PG(AV) 0.5 Storage temperature Tstg -40~150 Operation junction temperature TJ 125 ELECTRICAL CHARACTERISTIC (TC=25℃ unless otherwise stated) A V V W ℃ ℃ Parameter Symbol Tests conditions min typ max Unit Peak Repetitive Blocking Current IDRM VDM=VDRM, Tj=125℃, RGK=1KΩ - - 0.5 mA Peak Repetitive Reverse Current IRRM VRM=VRRM, Tj=125℃, RGK=1KΩ - - 0.5 mA Peak on-state voltage VTM ITM=6A - － 1.8 V Gate ...