3DD1555A

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555A FOR LOW FREQUENCY R 3DD1555A MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 8A 3 V(max) 0.6 s(max) Package TO-3P(H)IS APPLICATIONS z z Horizontal deflection output for color TV. z3DD1555A RoHS NPN , FEATURES z 3DD1555A is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage plane type process, triple diffused process etc, adoption of fully plastic packge. RoHS product. ORDER MESSAGE 123 EQUIVALENT CIRCUIT RBE=50 (Typ.) Order codes Marking 3DD1555A-O-A-N-D D1555A MARKING Halogen Free Package NO TO-3P(H)IS Packaging Foam Device Weight 5.50 g(typ) Trademark Part No. Year month For example 8 2008 10 10 october 200911C 1/6 R ABSOLUTE RATINGS (Tc=25 ) 3DD1555A Parameter — Collector−Base Voltage — Collector−Emitter Voltage — Emitter−Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Max. Junction Temperature Storage temperature range Symbol BVCBO BVCEO BVEBO IC ICP IB PC Tj TSTG Value 1500 600 6 8 16 4 50 150 -55~+150 Unit V V V A A W ELECTRICAL CHARACTERISTICS (Tc=25 ) Parameter V(BR)CBO V(BR)EBO ICBO IEBO HFE VCE(sat) VBE(sat) -VF tf ts ft Tests conditions IC=1mA,IE=0 IE=400mA,Ic=0 VCB=1500V, IE=0 VEB=4V, IC=0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 4 A IC=4.5A, IB=0.9A IC=4.5A, IB=0.9A IF=4A IC=4A,2IB1=-IB2=1.6A fH=15.75kHz VCE=10V, IC=0.1A Min Max Unit 1500 V 6V 1 mA 40 150 mA 8 25 5 3V 1.3 V 2V 0.6 µs 6 µs 1 ...