3DD5032P

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032P FOR LOW FREQUENCY R 3DD5032P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1500 V 8A 3 V(max) 1 μs(max) ● APPLICATIONS ● Horizontal deflection output for color TV. 1 23 FEATURES ●3DD5032PNPN ● 3DD5032P is high breakdown ， ： 、, 。 voltage of NPN bipolar transistor. The main process of manufacture: high voltage planar process, triple diffused process etc., adoption of （RoHS）。 fully plastic packge. RoHS product. EQUIVALENT CIRCUIT ORDER MESSAGE Order codes 3DD5032P-O-A-N-D Marking D5032 Halogen Free NO Package TO-3P(H)IS Packaging Foam ：201412A 1/5 R ABSOLUTE RATINGS (Tc=25℃) Parameter — Collector−Base Voltage Symbol BVCBO — Collector−Emitter Voltage BVCEO — Emitter−Base Voltage Collector Current Base Current DC Pulse BVEBO IC ICP IB Collector Power Dissipation PC Max. Junction Temperature Tj Storage Temperature Range TSTG 3DD5032P Value 1500 Unit V 600 V 6V 8 16 A 4A 50 W 150 -55~+150 ℃ ℃ ELECTRICAL CHARACTERISTICS (Tc=25℃) Parameter V(BR)CBO V(BR)EBO ICBO IEBO HFE VCE(sat) VBE(sat) tf ts ft Tests conditions IC=1mA,IE=0 IE=400mA,IC=0 VCB=1500V, IE=0 VEB=4V, IC=0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 5 A IC=4.5A, IB=0.9A IC=4.5A, IB=0.9A IC=4A,2IB1=-IB2=1.8A fH=15.75kHz VCE=10V, IC=0.1A Min 1500 6 40 10 5 1.7 Max 1 150 30 3 1.5 1 9 Unit V V mA µA V V µs µs MHz ：201412A 2/5 R 3DD5032P . ELECTRICAL CHARACTERISTICS (curves)...