ACE1522B

ACE1522B P-Channel Enhancement Mode Field Effect Transistor Description Line current interrupter in telephone sets Relay High speed and line transformer drivers. Features  VDS(V)=-50V, ID=-0.13A  RDS(ON)＜10Ω@VGS=-5V  Voltage controlled p-channel small signal switch  High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage VDS -50 V VGS ±20 V Drain Current (Continuous) Drain Current (Pulse) ID -0.13 A ID -0.52 Power Dissipation(1) PD 0.35 W Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOT-23-3 Ordering information ACE1522B XX + H Halogen - free Pb - free BM : SOT-23-3 VER 1.2 1 ACE1522B P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit On/Off characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -50 V Zero Gate Voltage Drain Current Gate Leakage Current VDS=-50V, VGS=0V IDSS VDS=-50V, VGS=0V, TJ=125℃ IGSS VGS=±20V, VDS=0V On characteristics b -15 uA -60 ±10 nA Static Drain-Source On-Resistance RDS(ON) VGS=-5V, ID=-0.1A 10 Ω Gate Threshold Voltage VGS(th) VDS=VGS, ID=-1mA -0.8 -1.75 -2 V Forward Transconductance gFS VDS=-25V, ID=-0.1A Switching characteristics b 0.05 0.6 S Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time ...