Document
ACE7332M
N-Channel 30-V (D-S) MOSFET
Description The ACE7332M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance.
Key Features Low rDS(on) trench technology Low thermal impedance Fast switching speed
Features
VDS(V)=30V ID=15A (VGS=10V) RDS(ON)<8.5mΩ (VGS=10V) RDS(ON)<13mΩ (VGS=4.5V)
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
ID(A)
13 @ VGS = 10V
14
30
18 @ VGS = 4.5V
12
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) *AC
TA=25 OC TA=70 OC
Drain Current (Pulse) *B
Power Dissipation
TA=25 OC TA=70 OC
Operating and Storage Temperature Range
Symbol Max Unit
VDS 30 V VGS ±20 V
15 ID 12 A
IDM 50
3.5
PD
W 2
TJ,Tstg -55 to 150 OC
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient a
t <= 10 sec Steady State
Symbol RθJA
Max 35 81
Unit °C/W
Packaging DFN3x3-8L
TypeOrdering information ACE7332M XX + H
Halogen - free Pb - free NN : DFN3*3-8L
VER 1.1 1
ACE7332M
N-Channel 30-V (D-S) MOSFET
Electrical Characteristics
Parameter
Symbol
Gate-Source Threshold Voltage
Gate-Body Leakage
VGS(th) IGSS
Conditions Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±20V
Min. Typ. 1
Zero ate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55°C
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea Diode Forward Voltagea
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time
Rise Time Turn-Off Delay Time
Fall Time Input Capacitance Output Capacitance Reverse Transfer
Capacitance
ID(on)
RDS(ON)
gFS
VSD
Qg Qgs Qgd td(on) tr td(off) tf
Ciss Coss
Crss
VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 11 A VGS = 4.5 V, ID =8.8A VDS =15 V, ID = 11 A IS = 2.6A, VGS = 0 V
Dynamic b
VDS = 15 V, VGS = 4.5 ID =11 A
VDS = 15 V, RL = 1.4 Ω, ID = 11 A, VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f = 1 MHz
20
25
0.74
25 11 17 15 13 100 54 1456 231
198
Max Unit
±100 1
25
V nA
uA
A 13 mΩ 18
S V
nC
ns
pF
Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing
VER 1.1 2
Typical Performance Characteristics
ACE7332M
N-Channel 30-V (D-S) MOSFET
VER 1.1 3
ACE7332M
N-Channel 30-V (D-S) MOSFET
VER 1.1 4
Packing Information DFN3*3-8L
ACE7332M
N-Channel 30-V (D-S) MOSFET
U
Unit: mm
VER 1.1 5
ACE7332M
N-Channel 30-V (D-S) MOSFET
Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ACE Technology Co., LTD. http://www.ace-ele.com/
VER 1.1 6
.