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ACE7332M Dataheets PDF



Part Number ACE7332M
Manufacturers ACE Technology
Logo ACE Technology
Description N-Channel 30-V (D-S) MOSFET
Datasheet ACE7332M DatasheetACE7332M Datasheet (PDF)

ACE7332M N-Channel 30-V (D-S) MOSFET Description The ACE7332M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. Key Features  Low rDS(on) trench technology  Low thermal impedance  Fast switching speed Features  VDS(V)=30V  ID=15A (VGS=10V)  RDS(ON)<8.5mΩ (VGS=10.

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ACE7332M N-Channel 30-V (D-S) MOSFET Description The ACE7332M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. Key Features  Low rDS(on) trench technology  Low thermal impedance  Fast switching speed Features  VDS(V)=30V  ID=15A (VGS=10V)  RDS(ON)<8.5mΩ (VGS=10V)  RDS(ON)<13mΩ (VGS=4.5V) PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) ID(A) 13 @ VGS = 10V 14 30 18 @ VGS = 4.5V 12 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) *AC TA=25 OC TA=70 OC Drain Current (Pulse) *B Power Dissipation TA=25 OC TA=70 OC Operating and Storage Temperature Range Symbol Max Unit VDS 30 V VGS ±20 V 15 ID 12 A IDM 50 3.5 PD W 2 TJ,Tstg -55 to 150 OC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a t <= 10 sec Steady State Symbol RθJA Max 35 81 Unit °C/W Packaging DFN3x3-8L TypeOrdering information ACE7332M XX + H Halogen - free Pb - free NN : DFN3*3-8L VER 1.1 1 ACE7332M N-Channel 30-V (D-S) MOSFET Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20V Min. Typ. 1 Zero ate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55°C On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltagea Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ID(on) RDS(ON) gFS VSD Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 11 A VGS = 4.5 V, ID =8.8A VDS =15 V, ID = 11 A IS = 2.6A, VGS = 0 V Dynamic b VDS = 15 V, VGS = 4.5 ID =11 A VDS = 15 V, RL = 1.4 Ω, ID = 11 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 MHz 20 25 0.74 25 11 17 15 13 100 54 1456 231 198 Max Unit ±100 1 25 V nA uA A 13 mΩ 18 S V nC ns pF Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing VER 1.1 2 Typical Performance Characteristics ACE7332M N-Channel 30-V (D-S) MOSFET VER 1.1 3 ACE7332M N-Channel 30-V (D-S) MOSFET VER 1.1 4 Packing Information DFN3*3-8L ACE7332M N-Channel 30-V (D-S) MOSFET U Unit: mm VER 1.1 5 ACE7332M N-Channel 30-V (D-S) MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6 .


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