ACE7333M

ACE7333M P-Channel 30-V (D-S) MOSFET Description The ACE7333M uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. Features  Low rDS(on) trench technology  Low thermal impedance  Fast switching speed Applications  White LED boost converters  Automotive Systems  Industrial DC/DC Conversion Circuits PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) ID(A) -30 20 @ VGS = -10V -10.9 36 @ VGS = -4.5V -8.1 Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a TA=25 OC TA=70 OC Pulse Drain Current b Continuous Drain Current (Diode Continuous) a Power Dissipation a TA=25 OC TA=70 OC Operating Junction and Storage Temperature Range VDS 30 VGS ±20 -10.9 ID -8.2 IDM -50 IS -4.5 3.5 PD 2 TJ,TSTG -55 to 150 V V A A W OC Parameter Maximum Junction-to-Ambient a t≦10sec Steady State Symbol RθJA Maximum 35 81 Units ℃/W ℃/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 Packaging Type DFN3*3-8L ACE7333M P-Channel 30-V (D-S) MOSFET Ordering information ACE7333M NN + H Halogen - free Pb - free PN : DFN3*3-8L Electrical Characteristics Parameter Symbol Conditions Static Gate Source Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain-Current a Static Drain-Source On-Resistance a Forward Tra...