5N65

SEMICONDUCTOR 5N65 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (5A, 650Volts) DESCRIPTION The Nell 5N65 is a three-terminal silicon device with current conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltage rating of 650V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. FEATURES RDS(ON) = 2.4Ω@VGS = 10V Ultra low gate charge(19nC max.) Low reverse transfer capacitance (CRSS = 6.5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-251 (I-PAK) (5N65F) D D G S TO-252 (D-PAK) (5N65G) GDS TO-220AB (5N65A) GDS TO-220F (5N65AF) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 5 650 2.4 @ VGS = 10V 19 D (Drain) G (Gate) S (Source) www.ne llsem i.co m Page 1 of 8 SEMICONDUCTOR 5N65 Series RRooHHSS Nell High Power Products ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ VGS Gate to Source voltage ID Continous Drain Current TC=25°C TC=100°C IDM Pulsed Drain current(Note 1) IAR Avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1) IAR=5A, RGS=50Ω, VGS=10V EAS Single pulse avalanche energy (Note 2) IAS=5...