N-Channel Power MOSFET
SEMICONDUCTOR
5N90 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (5A, 900Volts)
DESCRIPTION
The Nel...
Description
SEMICONDUCTOR
5N90 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (5A, 900Volts)
DESCRIPTION
The Nell 5N90 is a three-terminal silicon device with current conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 5 volts.
They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.
D
GDS
TO-220AB (5N90A)
GDS
TO-220F (5N90AF)
FEATURES
RDS(ON) = 2.80Ω @ VGS = 10V Ultra low gate charge(40nC max.)
Low reverse transfer capacitance (CRSS = 13pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature
D (Drain)
G (Gate)
S (Source)
PRODUCT SUMMARY
ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max.
5 900 2.80 @ VGS = 10V 40
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS VDGR VGS
ID
IDM IAR EAR EAS dv/dt
Drain to Source voltage(Note 1) Drain to Gate voltage Gate to Source voltage
Continuous Drain Current
Pulsed Drain current (Note 1) Repetitive avalanche current (Note 1) Repetitive avalanche energy(Note 1) Single pulse avalanche energy (Note 2) Peak diode recovery dv/dt(Note 3)
TJ=25°C to 150°C RGS=20KΩ
TC=25°C TC=100°C
IAR=5A, RGS=50Ω, VGS=10V IAS=5A, L=52.8mH
PD
TO-220AB Total power dissipation (Derating factor above 25°C) TC=25°C
TO-220F
...
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