INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
6N40
·DESCRIPTION ·Drain Current ID= ...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
6N40
·DESCRIPTION ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
400 ±30
6
V V A
ID(puls)
Pulse Drain Current
24 A
Ptot Total Dissipation@TC=25℃
38 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 40 ℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
6N40
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
CONDITIONS VGS= 0; ID= 250µA VDS= VGS; ID=250µA IF=6A ;VGS= 0 VGS= 10V; ID= 3A VGS= ±30V;VDS= 0 VDS= 400V; VGS= 0
MIN TYPE MAX UNIT 400 V 2.0 4.0 V
1.4 V 1.0 Ω ±100 nA 250 µA
isc website：www.iscsemi.cn
2 isc & iscsemi is registered trademark
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...
