8N55

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 8N55 DESCRIPTION ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V(Min) ·Fast Switching Speed APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 550 ±20 8 V V A ID(puls) Pulse Drain Current 32 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.83 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 8N55 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage VDS= VGS; ID=1m A IS=8A ;VGS= 0 RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID=4A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 550V; VGS= 0 MIN TYPE MAX UNIT 550 V 2.0 4.5 V 2.0 V 1.5 Ω ±100 nA 200 µA isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark ...