9N50 Data Sheet PDF | Inchange Semiconductor





(Datasheet) 9N50 PDF Download

Part Number 9N50
Description N-Channel MOSFET Transistor
Manufacture Inchange Semiconductor
Total Page 2 Pages
PDF Download Download 9N50 Datasheet PDF

Features: INCHANGE Semiconductor isc N-Channel MOS FET Transistor isc Product Specificati on 9N50 ·DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage - : VDSS= 500V(Min) ·Fast Switching Sp eed ·APPLICATIONS ·General purpose p ower amplifier ·ABSOLUTE MAXIMUM RATI NGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS =0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 500 ±20 9 V V A ID(puls) Pulse Drain Current 36 A Ptot Total Dissipation@TC=25℃ 44 W Tj Max. Operating Junction Temp erature 150 ℃ Tstg Storage Temperatu re Range -55~150 ℃ ·THERMAL CHARAC TERISTICS SYMBOL PARAMETER Rth j-c T hermal Resistance, Junction to Case MA X UNIT 1.67 ℃/W isc website:www.is csemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fin eprint.cn INCHANGE Semiconductor isc N -Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Produc t Specification 9N50 SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) G.

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9N50 datasheet
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
9N50
·DESCRIPTION
·Drain Current ID= 9A@ TC=25
·Drain Source Voltage-
: VDSS= 500V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
500
±20
9
V
V
A
ID(puls)
Pulse Drain Current
36 A
Ptot Total Dissipation@TC=25
44 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.67 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

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