9N80 Datasheet PDF | Inchange Semiconductor





9N80 Datasheet PDF Download

Part Number 9N80
Description N-Channel MOSFET Transistor
Manufacture Inchange Semiconductor
Total Page 2 Pages
PDF Download Download 9N80 Datasheet PDF

Features: INCHANGE Semiconductor isc N-Channel MOS FET Transistor isc Product Specificati on 9N80 ·DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage - : VDSS= 800V(Min) ·Fast Switching Sp eed ·APPLICATIONS ·General purpose p ower amplifier ·ABSOLUTE MAXIMUM RATI NGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS =0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 800 ±20 9 V V A ID(puls) Pulse Drain Current 36 A Ptot Total Dissipation@TC=25℃ 240 W Tj Max. Operating Junction Tem perature 150 ℃ Tstg Storage Temperat ure Range -55~150 ℃ ·THERMAL CHARA CTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case M AX UNIT 0.7 ℃/W isc website:www.is csemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fin eprint.cn INCHANGE Semiconductor isc N -Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Produc t Specification 9N80 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltag.

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9N80 datasheet
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
9N80
·DESCRIPTION
·Drain Current ID= 9A@ TC=25
·Drain Source Voltage-
: VDSS= 800V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
800
±20
9
V
V
A
ID(puls)
Pulse Drain Current
36 A
Ptot Total Dissipation@TC=25
240 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.7 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

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