AUIRF7736M2TR Datasheet PDF


Part Number

AUIRF7736M2TR

Description

Power MOSFET

Manufacture

Infineon

Total Page 11 Pages
PDF Download
Download AUIRF7736M2TR Datasheet PDF


Features Datasheet pdf   AUTOMOTIVE GRADE AUIRF7736M2TR  Advanced Process Technology  Optimi zed for Automotive Motor Drive, DC-DC a nd other Heavy Load Applications  Ex ceptionally Small Footprint and Low Pro file  High Power Density  Low Par asitic Parameters  Dual Sided Coolin g  175°C Operating Temperature  Repetitive Avalanche Capability for Rob ustness and Reliability  Lead free, RoHS and Halogen free  Automotive Qualified * Automotive DirectFET® Po wer MOSFET  V(BR)DSS RDS(on) typ. m ax. ID (Silicon Limited) Qg (typical) 40V 2.5m 3.0m 108A 72nC    SS DG SS D Applicable DirectFET® Outli ne and Substrate Outline  M4 Direct FET® ISOMETRIC SB SC M2 M4 L4 L6 L8 Description The AUIRF7736M2 comb.
Keywords AUIRF7736M2TR, datasheet, pdf, Infineon, Power, MOSFET, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

AUIRF7736M2TR Datasheet
 
AUTOMOTIVE GRADE
AUIRF7736M2TR
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
 Automotive Qualified *
Automotive DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg (typical)
40V
2.5m
3.0m
108A
72nC
  
SS
DG
SS
D
Applicable DirectFET® Outline and Substrate Outline
M4 DirectFET® ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The AUIRF7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF7736M2 to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for
high current automotive applications
Base Part Number  
Package Type  
Standard Pack
Form
Quantity
Orderable Part Number  
AUIRF7736M2
DirectFET Medium Can
Tape and Reel
4800
AUIRF7736M2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (Tested)
IAR
EAR
TP
TJ
TSTG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
40
±20
108
77
22
179
432
63
2.5
54
286
See Fig. 16, 17, 18a, 18b
270
-55 to + 175
V
A
W
mJ
A
mJ
°C  
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1 2015-10-5




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)