Document
STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD
10 A, 600 V short-circuit rugged IGBT
Features
■ Lower on voltage drop (VCE(sat)) ■ Lower CRES / CIES ratio (no cross-conduction
susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Short-circuit withstand time 10µs
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Applications
■ High frequency motor controls ■ SMPS and PFC in both hard switch and
resonant topologies ■ Motor drives
TAB
3 1
D2PAK
TAB
3 1
DPAK
TAB
3 2 1
TO-220FP
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STGB10NC60KDT4
GB10NC60KD
STGD10NC60KDT4
GD10NC60KD
STGF10NC60KD
GF10NC60KD
STGP10NC60KD
GP10NC60KD
Packages D2PAK DPAK
TO-220FP TO-220
November 2009
Doc ID 11423 Rev 6
Packaging Tape and reel
Tube
1/20
www.st.com
20
Contents
Contents
STGx10NC60KD
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2/20 Doc ID 11423 Rev 6
STGx10NC60KD
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
D²PAK TO-220
Value DPAK
VCES Collector-emitter voltage (VGE = 0)
IC(1) Continuous collector current at TC = 25°C
IC(1) Continuous collector current at TC = 100°C
ICL(2) Turn-off latching current
ICP(3) Pulsed collector current
VGE Gate-emitter voltage
IF Diode RMS forward current at Tc=25°C
IFSM
Surge non repetitive forward current Tp = 10 ms sinusoidal
PTOT Total dissipation at TC = 25°C
VISO tscw
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C)
Short-circuit withstand time VCE = 0.5 VCES, Tj = 125 °C, RG = 10 Ω, VGE = 12 V
Tstg Storage temperature
Tj Operating junction temperature
1. Calculated according to the iterative formula
600 20 10
30 30 ±20 10 20 65 62 --
10
– 55 to 150
IC(TC)
=
--------------------------------------T----j-(--m----a---x---)---–-----T---C---------------------------------------Rthj – c × VCE(sat)(max)(Tj(max), IC(TC))
2. Vclamp = 80 % VCES, VGE = 15 V, RG = 10 Ω, TJ = 150 °C 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA
TO-220FP 9 6
25 2500
Unit
V A A A A V A A W V
µs
°C
Doc ID 11423 Rev 6
3/20
Electrical ratings
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case IGBT Rthj-case Thermal resistance junction-case diode Rthj-amb Thermal resistance junction-ambient
STGx10NC60KD
TO-220 D²PAK
1.9 4 62.5
Value
DPAK
2 4.5 100
Unit TO-220FP
5 7 °C/W 62.5
4/20 Doc ID 11423 Rev 6
STGx10NC60KD
2 Electrical characteristics
Electrical characteristics
(Tj =25°C unless otherwise specified)
Table 4. Static
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Collector-emitter
V(BR)CES breakdown voltage (VGE= 0)
IC= 1mA
VCE(sat)
Collector-emitter saturation voltage
VGE= 15V, IC= 5A VGE= 15V, IC= 5A, Tj= 125°C
VGE(th) Gate threshold voltage
VCE= VGE, IC= 250µA
ICES
Collector cut-off current (VGE = 0)
VCE= 600 V VCE=600 V, Tj = 125°C
IGES
Gate-emitter leakage current (VCE = 0)
VGE= ±20V
gfs(1) Forward transconductance VCE = 15V, IC= 5A
1. Pulse test: pulse duration < 300 µs, duty cycle < 2 %
600 4.5
V
2.2 2.5 1.8
V V
6.5 V
150 µA 1 mA
±100 nA
15 S
Table 5. Dynamic
Symbol
Parameter
Cies Coes Cres
Qg Qge Qgc
Input capacitance Output capacitance Reverse transfer capacitance
Total gate charge Gate-emitter charge Gate-collector charge
Test conditions
VCE = 25V, f = 1MHz, VGE = 0
VCE = 390V, IC = 5A, VGE = 15V, (see Figure 19)
Min. Typ. Max. Unit
380 pF - 46 - pF
8.5 pF
19 nC - 5 - nC
9 nC
Doc ID 11423 Rev 6
5/20
Electrical characteristics
STGx10NC60KD
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on) tr
(di/dt)on
Turn-on delay time Current rise time Turn-on current slope
td(on) tr
(di/dt)on
Turn-on delay time Current rise time Turn-on current slope
VCC = 390V, IC = 5A RG= 10Ω, VGE= 15V (see Figure 20)
VCC = 390V, IC = 5A RG= 10Ω, VGE= 15V, Tj=125°C (see Figure 20)
tr(Voff) td(off)
tf
Off voltage rise time Turn-off delay time Current fall time
tr(Voff) td(off)
tf
Off voltage rise time Turn-off delay time Current fall time
Vcc = 390V, IC = 5A, RGE = 10Ω, VGE = 15V (see Fi.