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GB10NC60KD Dataheets PDF



Part Number GB10NC60KD
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description short-circuit rugged IGBT
Datasheet GB10NC60KD DatasheetGB10NC60KD Datasheet (PDF)

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Applications ■ High frequency motor controls ■ SMPS and P.

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STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■ Motor drives TAB 3 1 D2PAK TAB 3 1 DPAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB10NC60KDT4 GB10NC60KD STGD10NC60KDT4 GD10NC60KD STGF10NC60KD GF10NC60KD STGP10NC60KD GP10NC60KD Packages D2PAK DPAK TO-220FP TO-220 November 2009 Doc ID 11423 Rev 6 Packaging Tape and reel Tube 1/20 www.st.com 20 Contents Contents STGx10NC60KD 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2/20 Doc ID 11423 Rev 6 STGx10NC60KD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter D²PAK TO-220 Value DPAK VCES Collector-emitter voltage (VGE = 0) IC(1) Continuous collector current at TC = 25°C IC(1) Continuous collector current at TC = 100°C ICL(2) Turn-off latching current ICP(3) Pulsed collector current VGE Gate-emitter voltage IF Diode RMS forward current at Tc=25°C IFSM Surge non repetitive forward current Tp = 10 ms sinusoidal PTOT Total dissipation at TC = 25°C VISO tscw Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Short-circuit withstand time VCE = 0.5 VCES, Tj = 125 °C, RG = 10 Ω, VGE = 12 V Tstg Storage temperature Tj Operating junction temperature 1. Calculated according to the iterative formula 600 20 10 30 30 ±20 10 20 65 62 -- 10 – 55 to 150 IC(TC) = --------------------------------------T----j-(--m----a---x---)---–-----T---C---------------------------------------Rthj – c × VCE(sat)(max)(Tj(max), IC(TC)) 2. Vclamp = 80 % VCES, VGE = 15 V, RG = 10 Ω, TJ = 150 °C 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA TO-220FP 9 6 25 2500 Unit V A A A A V A A W V µs °C Doc ID 11423 Rev 6 3/20 Electrical ratings Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case IGBT Rthj-case Thermal resistance junction-case diode Rthj-amb Thermal resistance junction-ambient STGx10NC60KD TO-220 D²PAK 1.9 4 62.5 Value DPAK 2 4.5 100 Unit TO-220FP 5 7 °C/W 62.5 4/20 Doc ID 11423 Rev 6 STGx10NC60KD 2 Electrical characteristics Electrical characteristics (Tj =25°C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit Collector-emitter V(BR)CES breakdown voltage (VGE= 0) IC= 1mA VCE(sat) Collector-emitter saturation voltage VGE= 15V, IC= 5A VGE= 15V, IC= 5A, Tj= 125°C VGE(th) Gate threshold voltage VCE= VGE, IC= 250µA ICES Collector cut-off current (VGE = 0) VCE= 600 V VCE=600 V, Tj = 125°C IGES Gate-emitter leakage current (VCE = 0) VGE= ±20V gfs(1) Forward transconductance VCE = 15V, IC= 5A 1. Pulse test: pulse duration < 300 µs, duty cycle < 2 % 600 4.5 V 2.2 2.5 1.8 V V 6.5 V 150 µA 1 mA ±100 nA 15 S Table 5. Dynamic Symbol Parameter Cies Coes Cres Qg Qge Qgc Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 5A, VGE = 15V, (see Figure 19) Min. Typ. Max. Unit 380 pF - 46 - pF 8.5 pF 19 nC - 5 - nC 9 nC Doc ID 11423 Rev 6 5/20 Electrical characteristics STGx10NC60KD Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 390V, IC = 5A RG= 10Ω, VGE= 15V (see Figure 20) VCC = 390V, IC = 5A RG= 10Ω, VGE= 15V, Tj=125°C (see Figure 20) tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time Vcc = 390V, IC = 5A, RGE = 10Ω, VGE = 15V (see Fi.


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