2SA1499

Power Transistors 2SA1499 Silicon PNP epitaxial planar type For high-speed switching s Features q High foward current transfer ratio hFE q High-speed switching q High collector to base voltage VCBO q Full-pack package which can be installed to the heat sink with one screw. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC –400 –400 –7 –1.2 – 0.6 25 2 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V A A W ˚C ˚C 14.0±0.5 Solder Dip 4.0 16.7±0.3 7.5±0.2 0.7±0.1 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 123 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current Emitter cutoff current ICBO VCB = –400V, IE = 0 IEBO VEB = –7V, IC = 0 –100 –100 µA µA Collector to emitter voltage Forward current transfer ratio VCEO hFE1* hFE2 IC = –10mA, IB = 0 VCE = –5V, IC = –100mA VCE = –5V, IC = –300mA –400 30 10 V 160 Collector to emitter saturation voltage VCE(sat) Base to emitter saturation voltage VBE(sat) IC = –300mA, IB = –60mA IC = –300mA, IB = –60mA –1.0 V –1.2 V Transition frequency Turn-on time Storage time Fall time fT VCE = –10V, IC...