2SK2114, 2SK2115
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High sp...
2SK2114, 2SK2115
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching
regulator
Outline
TO-220CFM
D 12 3 1. Gate
G 2. Drain 3. Source
S
2SK2114, 2SK2115
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK2114
2SK2115
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C
Symbol VDSS VDSS VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 450 500 ±30 5 20 5 35 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK2114, 2SK2115
Electrical Characteristics (Ta = 25°C)
Item
Drain to source 2SK2114
breakdown voltage
2SK2115
Gate to source breakdown voltage
Gate to source leak current
Zero gate
2SK2114
voltage drain current
2SK2115
Gate to source cutoff voltage
Static drain to 2SK2114
source on state 2SK2115 resistance
Forward transfer admittance
Symbol Min
V(BR)DSS
450 500
V(BR)GSS
±30
I GSS I DSS
— —
VGS(off) RDS(on)
2.0 — —
|yfs| 2.5
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test
Ciss Coss Crss t d(on) tr t d(off) tf VDF
t rr
— — — — — — — —
—
Typ —
—
— —
— 1.0 ...