isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Fa...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
regulators ,DC-DC converter,Motor Control
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
5
A
ID(puls)
Pulsed Drain Current
20
A
Ptot
Total Dissipation@TC=25℃
35
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·
2SK2118
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
2SK2118
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
tr
Rise Time
td(on) Turn-on Delay Time
tf
Fall Time
td(off) Turn-off Delay Time
CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID=1mA IS= 5.0A;VGS= 0 VGS= 10V; ID= 2.5A VGS= ±30V;VDS= 0 VDS= 500V; VGS= 0 VDS=10V; VGS=0V; fT=1MHz
ID=2.5A; VDD=10V; RL=12Ω
MIN TYPE MAX UNIT
600
V
2.0
3.0
V
0.9
V
1.1
1.5
Ω
±10 µA
250
µA
1000
45
pF
250
45
12 ns
55
105
NOTICE:
ISC ...