isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fa...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
regulators ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
10
A
ID(puls)
Pulsed Drain Current
30
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SK2149
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10V; ID=1mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 1A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 800V; VGS= 0
2SK2149
MIN TYPE MAX UNIT
800
V
2.0
4.0
V
2.0
Ω
±100 nA
500
µA
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use ...