2SK2150

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 15 A ID(puls) Pulsed Drain Current 60 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.833 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 50 ℃/W 2SK2150 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK2150 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VDS Diode Forward Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time ton Turn-on Time tf Fall Time toff Turn-off Time CONDITIONS VGS= 0; ID= 10mA VDS=10V; ID=1mA IDR=15A ;VGS= 0 VGS= 10V; ID= 7A VGS= ±25V;VDS= 0 VDS= 500V; VGS= 0 VDS=25V; VGS=0V; fT=1MHz VGS...