RJK1590DP3-A0

RJK1590DP3-A0 150 V - 1 A - MOS FET High Speed Power Switching Features  Capable of 2.5 V gate drive  Low drive current  Low on-resistance RDS (on) = 1.5  typ. (at VGS = 4 V) Outline RENESAS Package code: PRSP0004ZB-A (Package name: SOT-223) 4 3 2 1 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% Symbol VDSS VGSS ID ID (pulse) Note 1 IDR Pch ch-a Tch Tstg Data Sheet R07DS1255EJ0100 Rev.1.00 Mar 30, 2015 D 1. Gate 2. Drain 3. Source 4. Drain S Value 150 10 1 4 1 1.04 120 150 –55 to +150 (Ta = 25C) Unit V V A A A W C/W C C R07DS1255EJ0100 Rev.1.00 Mar 30, 2015 Page 1 of 7 RJK1590DP3-A0 Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol Min Typ Max Unit V (BR) DSS 150 — — V V (BR) GSS 10 — — V IGSS — — 10 A IDSS — — 1 A VGS (off) 0.5 — 1.5 V RDS (on) — 1.5 1.95  ...