3N75

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID=3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 750V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.0Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 750 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 3 A IDM Drain Current-Single Plused 8 A PD Total Dissipation @TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W 3N75 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA VSD Diode Forward On-voltage IS= 3A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1.5A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=750V; VGS= 0 tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time VGS=10V; ID=1.5A; VDD=1...