4N35 Transistor Datasheet

4N35 Datasheet, PDF, Equivalent


Part Number

4N35

Description

N-Channel MOSFET Transistor

Manufacture

Inchange Semiconductor

Total Page 2 Pages
Datasheet
Download 4N35 Datasheet


4N35
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
4N35
DESCRIPTION
·Drain Current ID= 4A@ TC=25
·Drain Source Voltage-
: VDSS= 350V(Min)
·Fast Switching Speed
APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
350
±30
4
V
V
A
ID(puls)
Pulse Drain Current
16 A
Ptot Total Dissipation@TC=25
75 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
3 /W
62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

4N35
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
isc Product Specification
4N35
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
CONDITIONS
VGS= 0; ID= 250µA
VDS= VGS; ID=1mA
IS=4A ;VGS= 0
VGS= 10V; ID=2A
VGS= ±30V;VDS= 0
VDS= 350V; VGS= 0
MIN TYPE MAX UNIT
350 V
2.0 4.0 V
1.4 V
2.0 Ω
±100 nA
10 µA
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Features INCHANGE Semiconductor isc N-Channel MOS FET Transistor isc Product Specificati on 4N35 DESCRIPTION ·Drain Current ID = 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Fast Switching Spee d APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC =25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VG S Gate-Source Voltage ID Drain Current -continuous@ TC=25℃ 350 ±30 4 V V A ID(puls) Pulse Drain Current 16 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Rang e -55~150 ℃ ·THERMAL CHARACTERISTI CS SYMBOL PARAMETER MAX UNIT Rth j- c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction t o Ambient 3 ℃/W 62.5 ℃/W isc webs ite:www.iscsemi.cn 1 isc & iscsemi i s registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semicon ductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 4N35 SYMBOL PARAMETER.
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