4N55

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 4N55 DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V(Min) ·Fast Switching Speed APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 550 ±30 4 V V A ID(puls) Pulse Drain Current 10 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 3 ℃/W 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 4N55 SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0; ID= 250µA VDS= VGS; ID=250µA IS=4A ;VGS= 0 VGS= 10V; ID=0.5A VGS= ±30V;VDS= 0 VDS= 550V; VGS= 0 MIN TYPE MAX UNIT 550 V 2.0 4.0 V 1.4 V 1.2 Ω ±100 nA 10 µA isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn ...