2SK1622L

2SK1622(L), 2SK1622(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1622(L), 2SK1622(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW≤10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) IDR Pch*2 Tch Tstg Ratings 60 ±20 25 100 25 50 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1622(L), 2SK1622(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 60 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static Drain to source on state RDS(on) resistance — — 1.0 — — Forward transfer admittance |yfs| 12 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage td(on) tr td(off) tf VDF — — — — — Body to drain diode reverse recovery time trr — Note 1. Puls...