BS170G Signal MOSFET Datasheet

BS170G Datasheet, PDF, Equivalent


Part Number

BS170G

Description

Small Signal MOSFET

Manufacture

ON Semiconductor

Total Page 4 Pages
Datasheet
Download BS170G Datasheet


BS170G
BS170G
Small Signal MOSFET
500 mA, 60 Volts
NChannel TO92 (TO226)
Features
This is a PbFree Device*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain Source Voltage
GateSource Voltage
Continuous
Nonrepetitive (tp 50 ms)
Drain Current (Note)
Total Device Dissipation @ TA = 25°C
Operating and Storage Junction
Temperature Range
VDS 60
VGS
VGSM
ID
PD
TJ, Tstg
± 20
± 40
0.5
350
55 to
+150
Vdc
Vdc
Vpk
Adc
mW
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NOTE: The Power Dissipation of the package may result in a lower continuous
drain current.
http://onsemi.com
500 mA, 60 Volts
RDS(on) = 5.0 W
NChannel
D
G
S
123
TO92 (TO226)
CASE 29
STYLE 30
MARKING DIAGRAM
& PIN ASSIGNMENT
BS170
AYWWG
G
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
April, 2011 Rev. 6
1
123
Drain Gate Source
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
BS170/D

BS170G
BS170G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
DrainSource Breakdown Voltage
(VGS = 0, ID = 100 mAdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
IGSS
V(BR)DSS
60
0.01
90
10 nAdc
Vdc
VGS(Th)
0.8
2.0
3.0
Vdc
Static DrainSource On Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
rDS(on)
1.8 5.0
W
Drain Cutoff Current
(VDS = 25 Vdc, VGS = 0 Vdc)
Forward Transconductance
(VDS = 10 Vdc, ID = 250 mAdc)
ID(off)
0.5 mA
gfs 200 mmhos
SMALLSIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
TurnOn Time
(ID = 0.2 Adc) See Figure 1
Ciss
60 pF
ton 4.0 10 ns
TurnOff Time
(ID = 0.2 Adc) See Figure 1
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
toff 4.0 10 ns
ORDERING INFORMATION
Device
Package
Shipping
BS170G
TO92 (TO226)
(PbFree)
1000 Unit/Tube
BS170RLRAG
TO92 (TO226)
(PbFree)
2000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Features BS170G Small Signal MOSFET 500 mA, 60 V olts N−Channel TO−92 (TO−226) Fe atures • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage Gate−So urce Voltage − Continuous − Non−r epetitive (tp ≤ 50 ms) Drain Current (Note) Total Device Dissipation @ TA = 25°C Operating and Storage Junction Te mperature Range VDS 60 VGS VGSM ID PD TJ, Tstg ± 20 ± 40 0.5 350 −55 to +150 Vdc Vdc Vpk Adc mW °C Stresses exceeding Maximum Ratings may damage t he device. Maximum Ratings are stress r atings only. Functional operation above the Recommended Operating Conditions i s not implied. Extended exposure to str esses above the Recommended Operating C onditions may affect device reliability . NOTE: The Power Dissipation of the pa ckage may result in a lower continuous drain current. http://onsemi.com 500 m A, 60 Volts RDS(on) = 5.0 W N−Channel D G S 123 TO−92 (TO−226) CASE 29 STYLE 30 MARKING DIAGRAM & PIN ASSIGNMENT BS170 AYWWG G *For additional information on our Pb.
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