BS170G

BS170G Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226) Features This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current (Note) Total Device Dissipation @ TA = 25°C Operating and Storage Junction Temperature Range VDS 60 VGS VGSM ID PD TJ, Tstg ± 20 ± 40 0.5 350 −55 to +150 Vdc Vdc Vpk Adc mW °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: The Power Dissipation of the package may result in a lower continuous drain current. http://onsemi.com 500 mA, 60 Volts RDS(on) = 5.0 W N−Channel D G S 123 TO−92 (TO−226) CASE 29 STYLE 30 MARKING DIAGRAM & PIN ASSIGNMENT BS170 AYWWG G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 April, 2011 − Rev. 6 1 123 Drain Gate Source A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Numbe...