BF851A

DISCRETE SEMICONDUCTORS DATA SHEET BF851A; BF851B; BF851C N-channel junction FETs Product specification File under Discrete Semiconductors, SC07 1995 Apr 14 Philips Semiconductors Philips Semiconductors N-channel junction FETs Product specification BF851A; BF851B; BF851C FEATURES High transfer admittance Low input capacitance Low feedback capacitance Low noise. APPLICATIONS Preamplifiers for AM tuners in car radios. handbook, half1pa2ge 3 g MAM042 d s DESCRIPTION N-channel symmetrical junction field effect transistors in a SOT54 (TO-92) package. PINNING - SOT54 (TO-92) PIN SYMBOL DESCRIPTION 1 g gate 2 s source 3 d drain Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER VDS drain-source voltage (DC) IDSS drain current BF851A BF851B BF851C Ptot yfs total power dissipation forward transfer admittance BF851A BF851B BF851C Ciss input capacitance Crss reverse transfer capacitance CONDITIONS VGS = 0; VDS = 8 V up to Tamb = 40 °C VGS = 0; VDS = 8 V f = 1 MHz f = 1 MHz MIN. MAX. UNIT − 25 V 2 6.5 mA 6 15 mA 12 25 mA − 400 mW 12 20 mS 16 25 mS 20 30 mS − 10 pF − 3 pF 1995 Apr 14 2 Philips Semiconductors N-channel junction FETs Product specification BF851A; BF851B; BF851C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO ...