Document
NP16N06QLK
60 V – 16 A – Dual N-channel Power MOS FET Application: Automotive
Data Sheet
R07DS1290EJ0200 Rev. 2.00
May 24, 2018
Description
NP16N06QLK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance RDS(on)1 = 39 m MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 60 m MAX. (VGS = 4.5 V, ID = 4 A)
Low Ciss: Ciss = 500 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified Small size package 8-pin HSON dual
Outline
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
Lead Plating
Packing
NP16N06QLK-E1-AY *1 Pure Sn (Tin)
Tape 2500 p/reel
Taping (E1 type)
NP16N06QLK-E2-AY *1
Taping (E2 type)
Note: *1. Pb-free (This product does not contain Pb in the external electrode)
Package 8-pin HSON dual
R07DS1290EJ0200 Rev. 2.00 May 24, 2018
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NP16N06QLK
Absolute Maximum Ratings (TA = 25°C)
Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) 4 Drain Current (pulse) 1, 4, 5 Total Power Dissipation (TC = 25C) 4 Total Power Dissipation (TA = 25C) 2, 4 Channel Temperature Storage Temperature Repetitive Avalanche Current 3, 5 Repetitive Avalanche Energy 3, 5
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR
Ratings 60 ±20 ±16 ±32 25 1.0 175
55 to 175 7 5
Unit V V A A W W C C A mJ
Thermal Resistance
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance 2
Rth(ch-C)*5 Rth(ch-A) *5
5.95 150
C/W C/W
Notes: *1. TC = 25°C, PW 10 s, Duty Cycle 1% *2. Mounted on glass epoxy substrate of 40 mm 40 mm 1.6 mmt with 4% copper area (35 m) *3. RG = 25 , VGS = 20 V 0 V *4. One channel operation *5. Not subject of production test. Verified by design/characterization.
R07DS1290EJ0200 Rev. 2.00 May 24, 2018
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NP16N06QLK
Electrical Characteristics (TA = 25°C)
Item
Symbol Min
Typ
Max
Zero Gate Voltage Drain Current IDSS
1
Gate Leakage Current
IGSS
±10
Gate to Source Threshold Voltage VGS(th)
1.5
2.1
2.5
Forward Transfer Admittance 1
| yfs |
5
13
Drain to Source On-state Resistance 1
RDS(on)1 RDS(on)2
30
39
38
60
Input Capacitance *2
Ciss
500
750
Output Capacitance *2
Coss
50
75
Reverse Transfer Capacitance *2 Crss
30
54
Turn-on Delay Time *2
td(on)
15
30
Rise Time *2
tr
5
13
Turn-off Delay Time *2
td(off)
30
60
Fall Time *2
tf
3
8
Total Gate Charge *2
QG
11
17
Gate to Source Charge
QGS
3
Gate to Drain Charge Body Diode Forward Voltage 1
QGD VF(S-D)
3
0.9
1.5
Reverse Recovery Time
trr
20
Reverse Recovery Charge
Qrr
16
Note: *1. Pulsed test
Note: *2. Not subject of production test. Verified by design/characterization.
Unit A A V S m m pF pF pF ns ns ns ns nC nC nC V ns nC
Test Conditions VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 5 V, ID = 8 A VGS = 10 V, ID = 8 A VGS = 4.5 V, ID = 4 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 30 V, ID = 8 A, VGS = 10 V, RG = 0
VDD = 48 V, VGS = 10 V, ID = 16 A IF = 16 A, VGS = 0 V IF = 16 A, VGS = 0 V, di/dt = 100 A/s
R07DS1290EJ0200 Rev. 2.00 May 24, 2018
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NP16N06QLK
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120
dT - Percentage of Rated Power - %
100
80
60
40
20
0
0
50
100
150
200
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA
100
ID (pulse)= 3 2 A
10
ID (D C)= 1 6 A
Pt – Total Power Dissipation - W
30 25 20 15 10
5 0
0
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
50
100
150
200
TC - Case Temperature - C
ID - Drain Current - A
1
Power Dissipation Lim ited
0.1
TC=25℃ Single Pulse
0.01
0.1
1
10
100
VDS - Drain to Source Voltage – V
1000 100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
R th(ch-A) = 150°C/W
Rth(t) - Transient Thermal Resistance - C/W
10
R th(ch-C) = 5.95°C/W
1
0.1 100
One channel operation Single pulse
Mounted on a glass expoxy substrate of 40mm x 40mm 1.6 mmt with 4% Copper Area(35m)
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS1290EJ0200 Rev. 2.00 May 24, 2018
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RDS(on) - Drain to Source On-state Resistance - m
VGS(th) – Gate to Source Threshold Voltage - V
ID - Drain Current - A
NP16N06QLK
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
35
30
25
20
15
10
5
0 0
VGS=10V Pulsed
0.2 0.4 0.6 0.8 1 1.2
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE
4
3
2
1
VDS = VDS
ID=250A
0
-100 -50
0
50 100 150 200
Tch - Channel Temperature - .