NP179N04TUK

Preliminary Data Sheet NP179N04TUK 40 V – 180 A – N-channel Power MOS FET Application: Automotive R07DS1248EJ0100 Rev.1.00 Feb 12, 2015 Description The NP179N04TUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.25 mΩ MAX. (VGS = 10 V, ID = 90 A) Low Ciss Ciss = 8900 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP179N04TUK-E1-AY *1 NP179N04TUK-E2-AY *1 Lead Plating Pure Sn (Tin) Packing Tape 800 p/reel Taping (E1 type) Taping (E2 type) Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package TO-263-7pin Absolute Maximum Ratings (TA = 25°C) Item Symbol Ratings Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1 VDSS VGSS ID(DC) ID(pulse) 40 ±20 ±180 ±720 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) *2 PT1 PT2 288 1.8 Channel Temperature Tch 175 Storage Temperature Repetitive Avalanche Current *3 Repetitive Avalanche Energy *3 Tstg –55 to +175 IAR 66 EAR 435 Notes: *1 TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% *2 Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% Copper area (35 μm) *3 RG = 25 Ω, VGS = 20 V → 0 V Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rt...