NP45N06VDK

NP45N06VDK 60 V – 45 A – N-channel Power MOS FET Application: Automotive Data Sheet R07DS1295EJ0200 Rev.2.00 May 24, 2018 Description NP45N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance  RDS(on)1 = 11.6 m MAX. (VGS = 10 V, ID = 23 A)  Low Ciss: Ciss = 1530 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Outline TO-252(MP-3ZP) Equivalent circuit Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Ordering Information Part No. Lead Plating Packing NP45N06VDK-E1-AY *1 NP45N06VDK-E2-AY *1 Pure Sn (Tin) Tape 2500 p/reel Taping (E1 type) Taping (E2 type) Note: *1. Pb-free (This product does not contain Pb in the external electrode) Package TO-252(MP-3ZP) R07DS1295EJ0200 Rev.2.00 May 24, 2018 Page 1 of 7 NP45N06VDK Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse) 1*3 Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Repetitive Avalanche Current 2*3 Repetitive Avalanche Energy 2*3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR ...