NP45N06VUK

Preliminary Data Sheet NP45N06VUK, NP45N06PUK 60 V – 45 A – N-channel Power MOS FET Application: Automotive R07DS0953EJ0200 Rev.2.00 May 24, 2018 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A)  Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. Lead Plating Packing NP45N06VUK-E1-AY *1 Pure Sn (Tin) Tape 2500 p/reel Taping (E1 type) NP45N06VUK-E2-AY *1 Taping (E2 type) NP45N06PUK-E1-AY *1 Tape 800 p/reel Taping (E1 type) NP45N06PUK-E2-AY *1 Taping (E2 type) Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package TO-252 (MP-3ZP) TO-263 (MP-25ZP) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1, 3 Total Power Dissipation (TC = 25°C) Total Power Dissipation NP45N06VUK (TA = 25°C) NP45N06PUK Channel Temperature Storage Temperature Repetitive Avalanche Current *2, 3 Repetitive Avalanche Energy *2, 3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 60 20 45 135 75 1.2 1.8 175 –55 to +175 19 36 Unit V V A A W W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C)*3 Rth(ch-A) *3 ...