NP75N04YLG

Preliminary Data Sheet NP75N04YLG 40 V – 75 A – N-channel Power MOS FET Application: Automotive R07DS1247EJ0100 Rev.1.00 Mar 02, 2015 Description The NP75N04YLG is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on) = 8.3 mΩ MAX. (VGS = 4.5 V, ID = 38 A) Logic level drive type Gate to Source ESD protection diode built in Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. Lead Plating Packing NP75N04YLG-E1-AY *1 Pure Sn (Tin) Tape 2500 p/reel Taping (E1 type) NP75N04YLG-E2-AY *1 Taping (E2 type) Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package 8-pin HSON Absolute Maximum Ratings (TA = 25°C) Item Symbol Ratings Drain to Source Voltage (VGS = 0 V) VDSS 40 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) ID(DC) ±75 Drain Current (pulse) *1 ID(pulse) ±225 Total Power Dissipation (TC = 25°C) PT1 138 Total Power Dissipation (TA = 25°C) *2 PT2 1.0 Channel Temperature Tch 175 Storage Temperature Tstg –55 to +175 Repetitive Avalanche Current *3 IAR 35 Repetitive Avalanche Energy *3 EAR 123 Notes: *1 TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% *2 Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% Copper area (35 μm) *3 Tch(peak) ≤ 150°C, RG = 25 Ω Unit V V A A W W °C °C A mJ Thermal Resista...