NP75N04YUK
40 V – 75 A – N-channel Power MOS FET Application: Automotive
Preliminary Data Sheet
R07DS1004EJ0200 Rev.2.0...
NP75N04YUK
40 V – 75 A – N-channel Power MOS FET Application: Automotive
Preliminary Data Sheet
R07DS1004EJ0200 Rev.2.00
May 24, 2018
Description
The NP75N04YUK is N-channel MOS Field Effect
Transistors designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 38 A)
Non logic level drive type Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP75N04YUK-E1-AY *1 Pure Sn (Tin)
Tape 2500 p/reel
Taping (E1 type)
NP75N04YUK-E2-AY *1
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package 8-pin HSON
Absolute Maximum Ratings (TA = 25°C)
Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1, 4 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) *2 Channel Temperature Storage Temperature Repetitive Avalanche Current *3, 4 Repetitive Avalanche Energy *3, 4
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR
Ratings 40 20 75
300 138 1.0 175 –55 to +175 35 123
Unit V V A A W W °C °C A mJ
Thermal Resistance
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C)*4 Rth(ch-A) *4
1.09 150
°C/W °C/W
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1% *2 Mounted on glass epoxy substrate of 40 mm 40 mm 1.6 mmt with 4% Copper area (35 m) *3 RG = 25 , VGS = ...