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RB520S-40

JCET

Schottky barrier Diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encap sulate Diodes RB520S-40 Schottky Barrier Diod...


JCET

RB520S-40

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encap sulate Diodes RB520S-40 Schottky Barrier Diode SOD-523 FEATURES z Small surface mounting type z Low IR z High reliability MARKING: D1 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limit DC reverse voltage Mean rectifying current Non-repetitive peak forward surge current@t=8.3ms Power Dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature VR IO IFSM PD RθJA TJ TSTG 40 0.2 1 150 667 125 -55~+150 Unit V A A mW ℃/W ℃ Electrical Ratings @TA=25℃ Parameter Forward voltage Reverse current Symbol VF IR Min Typ Max Unit 0.304 0.446 0.605 2.837 0.39 0.55 1 10 V μA Conditions IF=10mA IF=100mA VR=10V VR=40V www.cj-elec.com 1 D,Mar,2015 Typical Characteristics Forward Characteristics 100 FORWARD CURRENT IF (mA) Ta=100 oC Ta=25 oC 10 1 0.1 0.01 0.0 0.2 0.4 0.6 FORWARD VOLTAGE VF (V) 0.8 REVERSE CURRENT IR (uA) Reverse Characteristics 100 Ta=100 oC 10 Ta=25 oC 1 0.1 0 10 20 30 40 REVERSE VOLTAGE VR (V) CAPACITANCE BETWEEN TERMINALS CT (pF) Capacitance Characteristics 100 Ta=25℃ f=1MHz 10 1 0 5 10 15 20 REVERSE VOLTAGE VR (V) POWER DISSIPATION PD (mW) Power Derating Curve 200 150 100 50 0 0 50 100 150 AMBIENT TEMPERATURE Ta (℃ ) www.cj-elec.com 2 D,Mar,2015 SOD-523 Package Outline Dimension...




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