RB521G-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for rectifying small power application
PINNING
PIN 1 2
1
...
RB521G-30
SILICON EPITAXIAL PLANAR
SCHOTTKY BARRIER DIODE
for rectifying small power application
PINNING
PIN 1 2
1
DESCRIPTION Cathode Anode
2
E
Top View Marking Code: "E" Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (60 Hz for 1 cyc.) Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 10 mA Reverse Current at VR = 10 V
Symbol
VR IO IFSM Tj Ts
Value 30 100 1 125
- 40 to + 125
Unit V mA A OC OC
Symbol VF IR
Max. 0.35
10
Unit V
µA
Note: Please pay attention to static electricity when handling.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
A C
RB521G-30
PACKAGE OUTLINE Plastic surface mounted package; 2 leads
∠ ALL ROUND
HE D
A
SOD-523
E bp
UNIT A b p C D E HE V
mm
0.70 0.60
0.4 0.135 1.25 0.85 0.3 0.127 1.15 0.75
1.7 1.5
0.1
∠
5O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
...
