JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
RB550V-30 Schottky Barrier Diode
...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
RB550V-30
Schottky Barrier Diode
FEATURES z Small Surface Mounting Type z Low VF and IR z High Reliability
APPLICATIONS z General Rectification
MARKING: SS
SOD-323
The marking bar indicates the cathode
MAXIMUM RATINGS (Ta =25℃ unless otherwise noted )
Symbol
Parameter
VRM Non-Repetitive Peak Reverse Voltage
IO Continuous Forward Current
IFSM Non-repetitive Peak Forward Surge Current@t=8.3ms
PD Power Dissipation
RθJA
Thermal Resistance From Junction To Ambient
Tj Junction Temperature
Tstg Storage Temperature
Value 30 1 3 200 500
125 -55～+150
Unit V A A
mW ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse voltage Reverse current
=V(BR) IR 1mA =IR VR 10V
Forward voltage =VF IF 700mA =IF 1A
Min Typ Max 30
0.03 0.49 0.52
Unit V mA
V
www.cj-elec.com
1
F,Mar,2015
Typical Characteristics
Forward Characteristics
1000
=100℃
FORWARD CURRENT I (mA) F
100
=25℃
10
T
a
T a
1
0.1 0
100 200 300 400
FORWARD VOLTAGE V (mV) F
500
REVERSE CURRENT I (uA) R
Reverse Characteristics
10000
1000 100
T =100℃ a
10
T =25℃ a
1
0.1 0.1
5
10 15 20 25
REVERSE VOLTAGE V (V) R
30
CAPACITANCE BETWEEN TERMINALS C (pF)
T
POWER DISSIPATION P (mW) D
Capacitance Characteristics
200
T =25℃ a
f=1MHz
150
100
50
0 0 2 4 6 8 10
REVERSE VOLTAGE V (V) R
250 200 150 100
50 0 0
Power Derating Curve
25 50 75 100
AMBIENT TEMPERATU...
