JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
RB551V -30 Schottky Barrier Diode...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
RB551V -30
Schottky Barrier Diode
FEA TURES z Low current rectifier
schottky diode z Low voltage, low inductance z For power supply
SOD-323
MAKING: D
The marking bar indicates the cathode Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter S Peak reverse voltage DC reverse voltage Mean rectifying current NSounrg-reeCpeutrirteivnet@Pet=a8k.3Fmorsward Power dissipation
Thermal resistance junction to ambient
Junction temperature Storage temperature
ymbol VRM VR IO IFSM Pd
RθJA Tj Tstg
Limit 30
30 0.5 2 200 500 125 -55~+150
Electrical Ratings @Ta=25℃ Parameter
Forward voltage Reverse current
Symbol Min Typ Max Unit
VF
0.36 0.47
V
IR 100 μA
Unit V V A A mW
℃/W ℃ ℃
Conditions IF=100mA IF=500mA VR=20V
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1
E,Aug,2015
FORWARD CURRENT IF (mA) Ta=100 oC Ta=25 oC
REVERSE CURRENT IR (uA)
Typical Characteristics
Forward Characteristics
500
100
10
1
0.1 0.0
0.1 0.2 0.3 0.4 0.5
FORWARD VOLTAGE VF (V)
0.6
Reverse Characteristics
1000
Ta=100 oC
100
10
Ta=25 oC
1
0.1 0
5 10 15 20 25
REVERSE VOLTAGE VR (V)
30
CAPACITANCE BETWEEN TERMINALS CT (pF)
POWER DISSIPATION PD (mW)
Capacitance Characteristics
1000
Ta=25℃ f=1MHz
100
10
1 0 5 10 15 20
REVERSE VOLTAGE VR (V)
250 200 150 100
50 0 0
Power Derating Curve
25 50 75 100
AMBIENT TEMPERATURE Ta (℃)
125
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