JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
RB715F SCHOTTKY BARRIER DIODE
FEA...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
RB715F
SCHOTTKY BARRIER DIODE
FEATURES: Extra small power mold type Low VF High reliability
MARKING: 3D
SOT-323
1 3
2
Solid dot = Green molding compound device,if none, the normal device.
Maximum Ratings @Ta=25 ℃
Parameter
Symbol
Peak reverse voltage
VRM
DC reverse voltage &1uRrQreUnHtS#HWWLWLYHPPeVak )orward 6urge Average forward current
VR IFSM
IO
Power dissipation
PD
Thermal Resistance Junction to Ambient 5ș-$
Junction temperature
Tj
Storage temperature
Tstg
Limit 40 40 200 30 200
500 125 -55+~150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Reverse voltage leakage current Forward voltage Capacitance between terminals
Symbol IR VF CT
Test conditions VR=10V IF=1mA
VR=1V, f=1MHz
Min Typ 2.0
Unit
V V
mA mA mW ℃/W
℃ ℃
Max 1
0.37
Unit μA V pF
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D,Oct,2015
FORWARD CURRENT I (mA) F Ta=100℃ Ta=25℃
REVERSE CURRENT I (uA) R
Typical Characteristics
Forward Characteristics
200 100
10
1
0.1 0.0
0.2 0.4 0.6 0.8
FORWARD VOLTAGE V (V) F
1.0
10
1
0.1
0.01
1E-3 0
Reverse Characteristics
Ta=100℃
Ta=25℃
10 20 30
REVERSE VOLTAGE V (V) R
40
CAPACITANCE BETWEEN TERMINALS C (pF)
T
POWER DISSIPATION P (mW) D
Capacitance Characteristics
4
Ta=25℃ f=1MHz
3
2
1 0 5 10 15 20
REVERSE VOLTAGE V (V) R
Power Derating Curve
250
200
150
100
50
0 0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta (℃)
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D,Oct,2015
SOT-...