RB715F

BL Galaxy Electrical Schottky Barrier Diode FEATURES z Extra small power mold type. z Low VF. z High reliability. Pb Lead-free Production specification RB715F APPLICATIONS z General purpose application. ORDERING INFORMATION Type No. Marking RB715F 3D SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Peak reverse voltage Diode reverse voltage VRM 40 VR 40 V V Average forward current IF 30 mA Forward Surge Current t=1μS IFS 200 mA Power Dissipation Junction temperature Pd 150 Tj 125 mW ℃ Storage temperature range Tstg -40-+125 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Symbol V(BR)R IR VF CD Test conditions IR= 100μA VR=10V IF=1mA VR=1V f=1MHz MIN MAX UNIT 40 V 1 μA 370 mV 2.0 pF Document number: BL/SSSKF027 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification Schottky Barrier Diode RB715F TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSKF027 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Schottky Barrier Diode PACKAGE OUTLINE Plastic surface mounted package Production specification RB715F SOT-323 SOT-323 Dim Min Max A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.15 0.35 E 0.25 0.40 G 1.2 1.4 H 0.02 0.1 J 0.1Typical K 2.1 2.3 All Dimensions in mm PACKAGE INFORMATION Device Package Shipping RB715F SOT...