RB715W

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes RB715W SCHOTTKY BARRIER DIODE FEATURES: Extra Small Power Mold Type Low VF High Reliability MARKING: 3D SOT-523 1 3 2 Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings @Ta=25 ℃ Parameter Peak reverse voltage DC reverse voltage 1RQUHSHWLWLYHPeak )orward 6urge &urrent#W PV Average forward current Power dissipation Thermal Resistance from Junction to Ambient Junction temperature Storage temperature Symbol VRM VR IFSM IO PD RθJA Tj Tstg Limit 40 40 200 30 150 667 125 -55~+150 Unit V V mA mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse voltage leakage current Symbol IR Test conditions VR=10V Min Typ Forward voltage Capacitance between terminals VF IF=1mA CT VR=1V, f=1MHz 2.0 Max 1 0.37 Unit μA V pF www.cj-elec.com 1 D,Oct,2015 FORWARD CURRENT I (mA) F Ta=100℃ Ta=25℃ REVERSE CURRENT I (nA) R Typical Characteristics Forward Characteristics 100 10 1 0.1 0.01 0.0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE V (V) F 1.0 1000 100 10 1 0 Reverse Characteristics Ta=100℃ Ta=25℃ 10 20 30 REVERSE VOLTAGE V (V) R 40 CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D Capacitance Characteristics 5 Ta=25℃ f=1MHz 4 3 2 1 0 0 5 10 15 20 REVERSE VOLTAGE V (V) R Power Derating Curve 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta (℃) www.cj-elec.com 2 D,Oct,2015 SOT-523 P...