JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-923 Plastic-Encapsulate Diodes
RB751CS-40 SCHOTTKY BARRIER DIODE...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-923 Plastic-Encapsulate Diodes
RB751CS-40
SCHOTTKY BARRIER DIODE
FEATURES z Ultra Small Surface Mounting Type z Low Forward Voltage z High Reliability
APPLICATIONS: z Low current rectification
MARKING:5
SOD-923
The marking bar indicates the cathode
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRM Non-Repetitive Peak Reverse Voltage
IO Forward Continuous Current
IFSM
Non-Repetitive Peak Forward Surge Current @t=8.3ms
PD Power Dissipation
RΘJA
Thermal Resistance from Junction to Ambient
Tj Junction Temperature
Tstg Storage Temperature
Value 40 30 200 100
1000 125 -55~+150
Unit V mA mA
mW ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Reverse voltage
V(BR)
IR=1mA
Reverse current =IR VR 30V
Forward voltage =VF IF 1mA
Total capacitance
==Ctot VR 1V,f 1MHz
40 V 0.5 µA 0.37 V
2 pF
www.cj-elec.com
1
E,Mar,2015
Typical Characteristics
Forward Characteristics
30 10
1
Reverse Characteristics
30
10 Ta=100℃
T
=75℃
a
1
REVERSE CURRENT I (uA) R
=100℃
FORWARD CURRENT I (mA) F
=75℃
T
a
=25℃
T
a
T
a
0.1
0.01 0
100 200 300 400
FORWARD VOLTAGE V (mV) F
500
600
Capacitance Characteristics
5
T =25℃ a
f=1MHz
4
3
2
1
0 0 5 10 15 20 25 30 35
REVERSE VOLTAGE V (V) R
0.1
T
=25℃
a
0.01 0.1
5
10 15 20 25 30 35 40
REVERSE VOLTAGE V (V) R
125 100
75 50 25
0 0
Power Derating Curve
25 50 75 100
AMBIEN...
