JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
RB751S-40 Schottky barrier Diode
...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
RB751S-40
Schottky barrier Diode
FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability
SOD-523
MARKING: 5
2
The marking bar indicates the cathode Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Peak reverse voltage
VRM
DC reverse voltage
VR
Mean rectifying current
IO
Non-repetitive Peak Forward Surge Current@t=8.3ms Power dissipation
IFSM PD
Thermal Resistance Junction to Ambient RθJA
Junction temperature
Tj
Storage temperature
Tstg
Limit 40 30 30
200 150 667 125 -55~+150
Unit V V mA
mA mW ℃/W ℃ ℃
Electrical Ratings @Ta=25℃
Parameter Forward voltage Reverse current Capacitance between terminals
Symbol VF IR CT
Min
Typ Max Unit 0.37 V 0.5 μA
2 pF
Conditions IF=1mA
VR=30V VR=1V,f=1MHZ
www.cj-elec.com
1
D,Mar,2015
Typical Characteristics
Forward Characteristics
100
10
T a =100 oC
oC
=25
T a
FORWARD CURRENT I (mA) F
1
0.1
0.01 0.0
0.2 0.4 0.6 0.8
FORWARD VOLTAGE V (V) F
1.0
REVERSE CURRENT I (uA) R
Reverse Characteristics
10
T =100 oC a
1
0.1
T =25 oC a
0.01
1E-3 0
5 10 15 20 25 30 35
REVERSE VOLTAGE V (V) R
CAPACITANCE BETWEEN TERMINALS C (pF)
T
POWER DISSIPATION P (mW) D
Capacitance Characteristics
10
9 T =25℃ a
8 f=1MHz
7 6 5 4
3
2
1 0 5 10 15 20
REVERSE VOLTAGE V (V) R
Power Derating Cur...
