RB751S-40 Schottky barrier Diodes
FEATURES z Small surface mounting type z Low reverse current and low forward voltage z...
RB751S-40
Schottky barrier Diodes
FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature
Symbol VRM VR IO IFSM Tj Tstg
Limits 40 30 30 200 125
-55~+125
Unit V V mA mA
℃ ℃
Electrical Ratings @TA=25℃ Parameter
Forward voltage Reverse current Capacitance between terminals
Symbol VF IR CT
Min. Typ. Max. Unit 0.37 V 0.5 µA
2 pF
Conditions IF=1mA VR=30V
VR=1V, f=1MHZ
Typical Characteristics
RB751S-40
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